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Patent Searching and Data


Title:
HIGH-PURITY SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/077848
Kind Code:
A1
Abstract:
The present application belongs to the field of semiconductor materials and discloses a high-purity silicon carbide single crystal substrate and a preparation method therefor. The high-purity silicon carbide single crystal substrate at least comprises a silicon carbide single crystal substrate surface layer and a silicon carbide single crystal substrate body layer. The silicon carbide single crystal substrate surface layer has an intrinsic point defect concentration lower than that of the silicon carbide single crystal substrate body layer, and the silicon carbide single crystal substrate has semi-insulating properties. In the preparation method, a high-temperature rapid heat treatment and surface laser annealing is performed on a high-purity silicon carbide single crystal wafer, so as to remove point defects introduced into a region on a surface of a high-purity semi-insulating silicon carbide substrate, while retaining internal point defects located at a distance from the surface of the substrate, such that a clean region is created on a defect-free surface layer of the silicon carbide single crystal substrate, the semi-insulating properties of the silicon carbide single crystal substrate are retained, and optimal quality is obtained for a prepared GaN epitaxial layer.

Inventors:
GAO CHAO (CN)
BAI WENWEN (CN)
ZHANG HONGYAN (CN)
DOU WENTAO (CN)
Application Number:
PCT/CN2018/123710
Publication Date:
April 23, 2020
Filing Date:
December 26, 2018
Export Citation:
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Assignee:
SICC CO LTD (CN)
International Classes:
C30B23/02; C30B25/18; C30B29/36; C30B33/02
Foreign References:
CN1695253A2005-11-09
CN1663033A2005-08-31
CN106757357A2017-05-31
CN105821471A2016-08-03
CN107723798A2018-02-23
CN1351680A2002-05-29
CN108130592A2018-06-08
Other References:
See also references of EP 3666935A4
Attorney, Agent or Firm:
BEIJING JUNHUI INTELLECTUAL PROPERTY AGENT OFFICE (ORDINARY PARTNERSHIP) (CN)
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