Title:
HIGH-RELIABILITY GAN POWER TUBE FAST GATE DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2021/179342
Kind Code:
A1
Abstract:
A high-reliability GaN power tube fast gate drive circuit, comprising: a control end of a drive current adjustment circuit (110) and an input end of a phase inverter (INV115) are connected to an input end of the gate drive circuit; the input end of the gate drive circuit is used for inputting a control signal On; an output end of the phase inverter (INV115) is connected to a control end of a first MOS switch (Q111) and an input end of a turn-off delay circuit (112); an output end of the turn-off delay circuit (112) is connected to a control end of a second MOS switch (Q113); the drive current adjustment circuit (110) outputs two current sources iCp and iDrv which are respectively connected to a node a and a node b at two ends of a charge pump capacitor (C120); the first MOS switch (Q111) has one switch end connected to the node a, and the other switch end connected to a reference ground; the second MOS switch (Q113) has one switch end connected to the node b, and the other switch end connected to the reference ground; the node b is used as an output end of the gate drive circuit. The working reliability of a GaN power tube can be improved.
Inventors:
LI YE (CN)
HUANG FEIMING (CN)
ZHAO WENXIA (CN)
HE JIE (CN)
ZHU QINWEI (CN)
HUANG FEIMING (CN)
ZHAO WENXIA (CN)
HE JIE (CN)
ZHU QINWEI (CN)
Application Number:
PCT/CN2020/079855
Publication Date:
September 16, 2021
Filing Date:
March 18, 2020
Export Citation:
Assignee:
WUXI SI POWER MICRO ELECTRONICS CO LTD (CN)
International Classes:
H03K19/003; H02M1/08
Foreign References:
| CN211377999U | 2020-08-28 | |||
| CN104917467A | 2015-09-16 | |||
| CN103915990A | 2014-07-09 | |||
| CN208094427U | 2018-11-13 | |||
| CN108336988A | 2018-07-27 | |||
| US20130241520A1 | 2013-09-19 |
Attorney, Agent or Firm:
WUXI DAWEI PATENT TRADE MARK AGENCY(GENERAL PARTNERSHIP) (CN)
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