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Title:
HIGH-RESISTANCE TRANSPARENT FILM
Document Type and Number:
WIPO Patent Application WO/2021/090829
Kind Code:
A1
Abstract:
This high-resistance transparent film (20) comprises an oxide that is formed on a transparent substrate (12) and that contains In, Zr, and Si as metal components. A peak shift layer (21) for which the peak position of binding energy of In3d5/2 is at least 0.5 eV farther toward the high-energy side than the peak position of binding energy of In3d 5/2 in a surface layer (22) of the high-resistance transparent film (20), in X-ray photoelectron spectrometry, is provided on the transparent-substrate (12) side of the high-resistance transparent film (20), and the film thickness of the peak shift layer (21) in terms of SiO2 is 6.5 nm or less.

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Inventors:
KAWAMURA SHIORI (JP)
MORI RIE (JP)
KONDO YUICHI (JP)
YAMAGUCHI GO (JP)
Application Number:
PCT/JP2020/041181
Publication Date:
May 14, 2021
Filing Date:
November 04, 2020
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/08; C04B35/00; G06F3/041; H01L51/50; H05B33/02
Domestic Patent References:
WO2019208240A12019-10-31
Foreign References:
JP2019114808A2019-07-11
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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