Title:
HIGH-TEMPERATURE VALVE DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/086778
Kind Code:
A1
Abstract:
A high-temperature valve device (40, 140), which can be positioned under a reactor (10) for generating silicon, is provided with: a first tube-shaped member (50) connected to the interior space of the reactor, and capable of introducing silicon generated in the reactor; a valve (64) positioned in the first tube-shaped member; and a heater (100) capable of heating a heating region including the valve and part of the first tube-shaped member from the reactor to the valve to a temperature greater than or equal to the boiling point of the related substances pertaining to the generation of silicon in the reactor.
Inventors:
NAKAHARA KATSUMASA (JP)
KONDOU MASASHI (JP)
TAKEUCHI YOSHINORI (JP)
SAKAKI DAISUKE (JP)
KONDOU MASASHI (JP)
TAKEUCHI YOSHINORI (JP)
SAKAKI DAISUKE (JP)
Application Number:
PCT/JP2011/079867
Publication Date:
June 28, 2012
Filing Date:
December 22, 2011
Export Citation:
Assignee:
ASAHI GLASS CO LTD (JP)
NAKAHARA KATSUMASA (JP)
KONDOU MASASHI (JP)
TAKEUCHI YOSHINORI (JP)
SAKAKI DAISUKE (JP)
NAKAHARA KATSUMASA (JP)
KONDOU MASASHI (JP)
TAKEUCHI YOSHINORI (JP)
SAKAKI DAISUKE (JP)
International Classes:
F16K49/00; C01B33/033; F16K1/22; F16K1/226
Domestic Patent References:
WO2010134544A1 | 2010-11-25 |
Foreign References:
JPH07167307A | 1995-07-04 | |||
JPH11270701A | 1999-10-05 |
Attorney, Agent or Firm:
KAWAMOTO, Manabu et al. (JP)
Manabu Kawamoto (JP)
Manabu Kawamoto (JP)
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Claims: