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Patent Searching and Data


Title:
HIGH-THROUGHPUT VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/031425
Kind Code:
A1
Abstract:
A high-throughput vapor deposition apparatus and a vapor deposition method. A rotary workbench (2) is located in a reaction chamber (1); a gas introduction device (3) is located in the reaction chamber (1) and above the rotary workbench (2); a plurality of through holes (31) are formed in the gas introduction device (3); a gas isolation structure (4) divides an upper chamber (11) into an isolation gas chamber (11) and a reaction gas chamber (112) which are isolated from each other; an isolation gas introduction channel (5) introduces an isolation gas into the isolation gas chamber (111) and introduces a reaction gas into the reaction gas chamber (112) by means of a reaction gas introduction channel (6), so as to perform thin film deposition on an area of a substrate corresponding to the reaction gas chamber (112). The high-throughput vapor deposition apparatus only requires one isolation gas supply system and one reaction gas isolation system, and thus is simple in structure, easy to implement and good in isolation.

Inventors:
LI WEIMIN (CN)
YU WENJIE (CN)
ZHU LEI (CN)
WANG YIYING (CN)
Application Number:
PCT/CN2019/119929
Publication Date:
February 25, 2021
Filing Date:
November 21, 2019
Export Citation:
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Assignee:
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS (CN)
International Classes:
C23C16/458; C23C16/44
Foreign References:
CN110408910A2019-11-05
US20110226181A12011-09-22
CN1726300A2006-01-25
CN101962751A2011-02-02
CN106032572A2016-10-19
CN102127757A2011-07-20
CN107686984A2018-02-13
CN106158569A2016-11-23
JPS6294942A1987-05-01
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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