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Patent Searching and Data


Title:
IGBT CHIP INTEGRATED WITH TEMPERATURE SENSOR
Document Type and Number:
WIPO Patent Application WO/2021/238675
Kind Code:
A1
Abstract:
The present application relates to the technical field of power devices, and provides an IGBT chip integrated with a temperature sensor. The temperature monitoring accuracy of the IGBT chip can be improved. The IGBT chip integrated with a temperature sensor comprises cellular regions, emitter solder joints, a gate solder joint, a gate interdigital structure, a temperature sensing module, and a conductive shielding structure; the emitter solder joints are electrically connected to emitters of a plurality of IGBT cells; the gate interdigital structure is connected between the gate solder joint and gates of the plurality of IGBT cells; the temperature sensing module comprises a temperature sensor, an anode solder joint, a cathode solder joint, and a metal lead; the temperature sensor and at least a part of the metal lead are located in the gate interdigital structure and insulated from the gate interdigital structure; the conductive shielding structure is provided at least between the part of the metal lead located in the gate interdigital structure and the gate interdigital structure, and is electrically connected to the emitter solder joints. The IGBT chip integrated with a temperature sensor provided in the present application is applied to an electric vehicle or an elevator.

Inventors:
HUANG BONING (CN)
YANG WENTAO (CN)
WANG JUNHE (CN)
Application Number:
PCT/CN2021/093711
Publication Date:
December 02, 2021
Filing Date:
May 13, 2021
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/02; H01L29/739
Foreign References:
CN111816652A2020-10-23
CN110462840A2019-11-15
US5726481A1998-03-10
US20070114577A12007-05-24
CN102881679A2013-01-16
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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