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Title:
IGBT PHYSICAL MODEL PARAMETER EXTRACTION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/017348
Kind Code:
A1
Abstract:
An IGBT physical model parameter extraction method, characterized by comprising the following steps of: obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of the correspondence between IGBT dynamic and static features and the IGBT model parameter and in combination with an IGBT model parameter experiment measurement result. The purpose is to provide an IGBT physical model parameter extraction method aiming at defects in the prior art, so that the IGBT physical model parameter extraction method can be greatly simplified while the requirement of parameter extraction on model simulation precision is ensured, and the practicability of an IGBT physical model is improved.

Inventors:
LUO YIFEI (CN)
XIAO FEI (CN)
LIU BINLI (CN)
HUANG YONGLE (CN)
LI XIN (CN)
JIA YINGJIE (CN)
PU JING (CN)
XIONG YOUXING (CN)
Application Number:
PCT/CN2019/121527
Publication Date:
February 04, 2021
Filing Date:
November 28, 2019
Export Citation:
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Assignee:
NAVAL UNIV OF ENGINEERING (CN)
International Classes:
G11C29/54
Foreign References:
CN110502805A2019-11-26
CN105138741A2015-12-09
CN109344419A2019-02-15
Other References:
GUANGXIAO LUO, LEI QI, WEIDONG ZHANG: "A Novel Parameter Extraction Method for High-power Trench-gated Field-stop IGBT Physical Model", PROCEEDINGS OF THE CSEE, vol. 38, no. 20, 14 October 2018 (2018-10-14), pages 6062 - 6070, XP055776976, ISSN: 0258-8013, DOI: 10.13334/j.0258-8013.pcsee.172533
KANG X; SANTI E; HUDGINS J L; PALMER P R; DONLON J F: "Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model", EIGHTEENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, 2003. APEC '03, vol. 2, 9 February 2003 (2003-02-09), pages 946 - 952, XP010631626, DOI: 10.1109/APEC.2003.1179330
Attorney, Agent or Firm:
WUHAN KAIYUAN INTELLECTUAL PROPERTY AGENT LTD. (CN)
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