Title:
IGZO SCHOTTKY DIODE-BASED DYNAMIC METAMATERIAL TUNING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/051923
Kind Code:
A1
Abstract:
The present invention relates to an IGZO Schottky diode-based dynamic metamaterial tuning method. An IGZO Schottky diode comprises, sequentially grown from bottom to top, a substrate, a Schottky electrode, an amorphous indium gallium zinc oxide active layer, and an Ohmic electrode. The method comprises the following steps: (1) using a metamaterial as a Schottky electrode, and enabling an amorphous indium gallium zinc oxide active layer to fully cover a capacitive structure in the metamaterial, wherein the capacitive structure in the metamaterial and the amorphous indium gallium zinc oxide active layer are combined to form a Schottky barrier; and (2) tuning the metamaterial by using an IGZO Schottky diode processed by step (1). The present invention achieves dynamic large-range tuning of electromagnetic properties of a metamaterial including transmittance, reflectance, and absorption rate without affecting a designed resonant frequency of a structure of the metamaterial, thereby enabling applications in various metamaterial devices and plasmon devices having a metamaterial structure, and achieving dynamic tuning of spatially transmitted and surface-transmitted electromagnetic waves.
Inventors:
ZHANG YIFEI (CN)
SONG AIMIN (CN)
LING HAOTIAN (CN)
WANG QINGPU (CN)
SONG AIMIN (CN)
LING HAOTIAN (CN)
WANG QINGPU (CN)
Application Number:
PCT/CN2020/098495
Publication Date:
March 25, 2021
Filing Date:
June 28, 2020
Export Citation:
Assignee:
SHAN DONG UNIV (CN)
International Classes:
H01L29/872; H01L29/24; H01Q15/00
Foreign References:
| CN110634959A | 2019-12-31 | |||
| CN104201233A | 2014-12-10 | |||
| CN108061981A | 2018-05-22 | |||
| US20090262766A1 | 2009-10-22 |
Attorney, Agent or Firm:
JINAN JINDI INTELLECTUAL PROPERTY AGENCY CO., LTD (CN)
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