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Title:
INDUCTOR STACK STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2019/196354
Kind Code:
A1
Abstract:
An inductor stack structure, comprising: a substrate; at least two metal layers successively stacked on one side of the substrate, each of the metal layers comprising at least a first planar inductor; and through holes located between any two adjacent metal layers. The first planar inductors in different metal layers are electrically connected by means of the through holes. The thickness of the through holes is greater than the thickness of the metal layers.

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Inventors:
CHENG WEI (CN)
ZUO CHENGJIE (CN)
HE JUN (CN)
Application Number:
PCT/CN2018/108197
Publication Date:
October 17, 2019
Filing Date:
September 28, 2018
Export Citation:
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Assignee:
ANHUI YUNTA ELECTRONIC TECH CO LTD (CN)
International Classes:
H01L23/522; H01F27/28; H01F27/34
Foreign References:
CN108346642A2018-07-31
CN103972207A2014-08-06
CN101752226A2010-06-23
CN102087907A2011-06-08
US7262680B22007-08-28
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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