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Title:
INSULATED GATE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/037981
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising a p-type body region 11, an n-type inversion layer 15, an n-type source region 12, an n-type drain region 13, an insulated gate electrode 16, and a drift region 100. The drift region 100 comprises: an n-type first low-concentration layer 21n, a second low-concentration layer 22, and a third low-concentration layer 23 composed of a first semiconductor material; an n-type carrier formation layer 30 positioned in one of gaps therebetween; and a p-type carrier formation layer 40 positioned in the other of the gaps. The n-type carrier formation layer 30 has a two-dimensional electron layer 31e formed at a hetero-interface formed between the first semiconductor material and the second semiconductor material. The p-type carrier formation layer 40 is formed of a doping layer of the first semiconductor material. One end of the n-type carrier formation layer 30 is electrically connected to the n-type drain region 13, and the other end thereof is electrically connected to the n-type source region 12 via the n-type inversion layer 15. Further, the p-type carrier formation layer 40 is electrically connected to the p-type body region 11.

Inventors:
KUSHIDA TOMOYOSHI (JP)
HIRAMOTO TOSHIRO (JP)
Application Number:
PCT/JP2022/033131
Publication Date:
March 16, 2023
Filing Date:
September 02, 2022
Export Citation:
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Assignee:
KUSHIDA TOMOYOSHI (JP)
HIRAMOTO TOSHIRO (JP)
International Classes:
H01L29/778; H01L21/336; H01L21/338; H01L29/06; H01L29/78; H01L29/812
Foreign References:
JP2003249645A2003-09-05
JP2000021783A2000-01-21
US20040026765A12004-02-12
JPH09266311A1997-10-07
Other References:
KASAMATSU A, KASAI K, HIKOSAKA K, MATSUI T, MIMURA T: "60nm gate-length Si/SiGe HEMT", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM , NL, vol. 224, no. 1-4, 1 March 2004 (2004-03-01), Amsterdam , NL , pages 382 - 385, XP093045865, ISSN: 0169-4332, DOI: 10.1016/j.apsusc.2003.08.064
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