Title:
ION SOURCE WITH SUBSTANTIALLY PLANAR DESIGN
Document Type and Number:
WIPO Patent Application WO2006055296
Kind Code:
A3
Abstract:
In certain example embodiments of this invention, there is provide an ion source including an anode (25) and a cathode (5). In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between the anode and cathode, there is less undesirable build-up on the anode and/or cathode during operation of the ion source so that the source can run more efficiently. Moreover, in certain example embodiments, an insulator (35) such as a ceramic or the like is provided between the anode and cathode.
Inventors:
LUTEN HENRY A (US)
VEERASAMY VIJAYEN S (US)
VEERASAMY VIJAYEN S (US)
Application Number:
PCT/US2005/040159
Publication Date:
August 31, 2006
Filing Date:
November 07, 2005
Export Citation:
Assignee:
GUARDIAN INDUSTRIES (US)
LUTEN HENRY A (US)
VEERASAMY VIJAYEN S (US)
LUTEN HENRY A (US)
VEERASAMY VIJAYEN S (US)
International Classes:
H01J27/14; H01J3/04; H01J37/08
Foreign References:
| US20040074444A1 | 2004-04-22 | |||
| US6242749B1 | 2001-06-05 | |||
| US6153067A | 2000-11-28 |
Other References:
"SUPERCONDUCTING MAGNETIC HALL EFFECT ION SOURCE", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 35, no. 3, 1 August 1992 (1992-08-01), pages 345 - 346, XP000326293, ISSN: 0018-8689
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