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Patent Searching and Data


Title:
LAMINATED STRUCTURE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/065940
Kind Code:
A1
Abstract:
Provided is a laminated structure that has a crystalline film having a large area, which is useful for a semiconductor device, etc., and having a good film thickness distribution in which the film thickness is 30 μm or less, and that has excellent heat dissipation. In a laminated structure in which a crystal film containing a crystalline metal oxide as a main component is laminated on a support directly or with another layer therebetween, the support has a thermal conductivity of 100 W/m·K or more at room temperature, and the crystal film has a corundum structure. Furthermore, the film thickness of the crystal film is 1 μm to 30 μm, the area of the crystal film is 15 cm2 or more, and the distribution of the film thickness in the area is in the range of ± 10% or less.

Inventors:
OSHIMA TAKAYOSHI (JP)
TORIYAMA TATSUYA (JP)
Application Number:
JP2020/036990
Publication Date:
April 08, 2021
Filing Date:
September 29, 2020
Export Citation:
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Assignee:
FLOSFIA INC (JP)
International Classes:
C30B29/16; C23C16/40; C30B25/18; C30B33/06; H01L21/205; H01L21/329; H01L21/336; H01L21/363; H01L29/12; H01L29/47; H01L29/739; H01L29/78; H01L29/861; H01L29/868; H01L29/872
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