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Title:
LASER MACHINING METHOD AND PRODUCTION METHOD FOR SEMICONDUCTOR MEMBER
Document Type and Number:
WIPO Patent Application WO/2020/130109
Kind Code:
A1
Abstract:
A laser machining method comprising: a first step in which the inside of a semiconductor object containing gallium is irradiated with laser light from the surface of the semiconductor object, thereby forming, along a virtual plane on the inside of the semiconductor object facing the surface thereof, a plurality of modified spots and a plurality of deposition areas containing gallium that has been deposited in the plurality of modified spots; and a second step in which, after the first step, the deposition areas are expanded by irradiating the inside of the semiconductor object with laser light from the surface thereof such that energy in the virtual plane is less than the machining threshold of the semiconductor object.

Inventors:
KAWAGUCHI DAISUKE (JP)
WANI YOTARO (JP)
IGASAKI YASUNORI (JP)
Application Number:
PCT/JP2019/049956
Publication Date:
June 25, 2020
Filing Date:
December 19, 2019
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
B28D5/00; B23K26/53; H01L21/301; H01L21/304
Domestic Patent References:
WO2017199784A12017-11-23
WO2005098916A12005-10-20
Foreign References:
JP2017183600A2017-10-05
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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