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Title:
LASER MACHINING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/130108
Kind Code:
A1
Abstract:
A laser machining method for cutting a semiconductor wafer along a virtual plane that is inside the semiconductor wafer and faces the surface of the semiconductor wafer, said method comprising: a first step for forming a plurality of modified spots along the virtual plane inside the semiconductor wafer by radiating laser light into the semiconductor wafer from the surface thereof; and a second step for forming by epitaxial growth, on the semiconductor wafer after the first step, a semiconductor layer for a semiconductor device.

Inventors:
KAWAGUCHI DAISUKE (JP)
WANI YOTARO (JP)
IGASAKI YASUNORI (JP)
Application Number:
PCT/JP2019/049955
Publication Date:
June 25, 2020
Filing Date:
December 19, 2019
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
B28D5/00; B23K26/53; H01L21/304
Domestic Patent References:
WO2017163548A12017-09-28
WO2010082267A12010-07-22
WO2011108698A12011-09-09
Foreign References:
JP2012169363A2012-09-06
JP2017183600A2017-10-05
JP2003535472A2003-11-25
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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