Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
LASER MACHINING METHOD, SEMICONDUCTOR MEMBER PRODUCTION METHOD, AND SEMICONDUCTOR OBJECT
Document Type and Number:
WIPO Patent Application WO/2020/129569
Kind Code:
A1
Abstract:
A laser machining method that comprises a first step in which laser light is shined into a semiconductor object from the surface of the semiconductor object to form a modified region inside the semiconductor object along a virtual plane that faces the surface of the semiconductor object, the modified region including: a plurality of modified spots; a plurality of fissures that respectively extend from the plurality of modified spots; and gas. During the first step, a peripheral region that does not have modified spots formed therein and that blocks the advancement of the fissures from the modified region toward the outer surface of the semiconductor object is provided to the semiconductor object so as to surround the modified region.

More Like This:
JPH10116801METHOD FOR DIVIDING SUBSTRATE AND MANUFACTURE OF LIGHT EMITTING ELEMENT USING THE METHOD
WO/2020/161462LASER MACHINING INSIDE MATERIALS
JPH01300522SEMICONDUCTOR-WAFER LAMINATE AND MANUFACTURE THEREOF
Inventors:
TANAKA ATSUSHI (JP)
SASAOKA CHIAKI (JP)
AMANO HIROSHI (JP)
KAWAGUCHI DAISUKE (JP)
WANI YOTARO (JP)
IGASAKI YASUNORI (JP)
Application Number:
PCT/JP2019/046656
Publication Date:
June 25, 2020
Filing Date:
November 28, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (JP)
HAMAMATSU PHOTONICS KK (JP)
International Classes:
B28D5/00; B23K26/53; H01L21/304
Domestic Patent References:
WO2010082267A12010-07-22
Foreign References:
JP2016215231A2016-12-22
JP2017183600A2017-10-05
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: PRINTING DEVICE AND PRINTING METHOD

Next Patent: INTERMITTENT VALVE DEVICE AND INTERMITTENT COATING DEVICE