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Patent Searching and Data


Title:
LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD, AND LASER PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/130055
Kind Code:
A1
Abstract:
Provided is a laser processing method for cutting a semiconductor object along a virtual plane facing a semiconductor object surface inside the semiconductor object, the method comprising: a first step for forming a plurality of first modified spots so as to have a first formation density along the virtual plane by irradiating the inside of the semiconductor object with a laser beam from the surface; and a second step for forming a plurality of second modified spots so as to have a second formation density higher than the first formation density along the virtual plane by irradiating the inside of the semiconductor object with a laser beam from the surface, after the first step.

Inventors:
TANAKA ATSUSHI (JP)
SASAOKA CHIAKI (JP)
AMANO HIROSHI (JP)
KAWAGUCHI DAISUKE (JP)
WANI YOTARO (JP)
IGASAKI YASUNORI (JP)
YUI TOSHIKI (JP)
Application Number:
PCT/JP2019/049701
Publication Date:
June 25, 2020
Filing Date:
December 18, 2019
Export Citation:
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Assignee:
NATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (JP)
HAMAMATSU PHOTONICS KK (JP)
International Classes:
B28D5/00; B23K26/53; H01L21/301; H01L21/304
Domestic Patent References:
WO2017199784A12017-11-23
Foreign References:
JP2016111149A2016-06-20
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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