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Patent Searching and Data


Title:
LDMOS DEVICE AND METHOD FOR PREPARING SAME
Document Type and Number:
WIPO Patent Application WO/2021/068648
Kind Code:
A1
Abstract:
The present invention relates to an LDMOS device and a method for preparing same. When a field plate hole is formed by etching an interlayer dielectric layer, the etching of the field plate hole is stopped on a blocking layer by means of providing the blocking layer between a semi-conductor base and the interlayer dielectric layer. By means of providing a first oxide layer between the blocking layer and a drift area, steps can be formed on the surface of the blocking layer. Since the blocking layer is provided with at least one layer of an etching stop layer, and steps are formed on the surface of the blocking layer, at least two levels of formed hole field plates are distributed in a step shape, and lower ends of the first level of hole field plates to the nth level of hole field plates are gradually further away from the drift area in the direction from a gate structure to a drain area, and thus, the distribution of electric fields at a front end and a rear section of the drift area can be made more uniform, and a breakdown voltage of an LDMOS device is improved. In addition, since a shallow trench isolation structure near the drain area is eliminated in the present application, the turn-on resistance can be reduced.

Inventors:
JIN HUAJUN (CN)
LI CHUNXU (CN)
Application Number:
PCT/CN2020/109711
Publication Date:
April 15, 2021
Filing Date:
August 18, 2020
Export Citation:
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Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
CN110299413A2019-10-01
CN109979821A2019-07-05
CN103035722A2013-04-10
CN109244142A2019-01-18
US20190288066A12019-09-19
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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