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Title:
LIGHT-EMITTING DIODE FLIP CHIP AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/233273
Kind Code:
A1
Abstract:
A light-emitting diode flip chip and a manufacturing method therefor. The light-emitting diode flip chip comprises a substrate (10), an N-type semiconductor layer (21), an active layer (22), a P-type semiconductor layer (23), a reflective electrode (41), a connection electrode (42), an insulating dielectric layer (50), a P-type bonding pad (61), and an N-type bonding pad (62); both the P-type bonding pad (61) and the N-type bonding pad (62) comprise a composite layer (71) having multiple periods and a welding layer (72) stacked on the composite layer (71); each period of the composite layer (71) comprises a Ti layer (711) and an Al layer (712) stacked on the Ti layer (711); the welding layer (72) is an AuSn alloy layer, and the content of Au component in the welding layer (72) is 64% to 68%. An N-type bonding pad (62) and a P-type bonding pad (61) are formed by adding a welding layer (72) on a plurality of composite layers (71) formed by Ti layers (711) and Al layers (712) stacked on the Ti layers (711), so that the N-type bonding pad (62) and the P-type bonding pad (61) can be used for welding without damaging a chip, avoiding electric leakage caused by a welding material passing through a welding region.

Inventors:
LAN, Ye (CN)
HUANG, Lei (CN)
ZHANG, Wei (CN)
WU, Zhihao (CN)
LI, Peng (CN)
Application Number:
PCT/CN2021/094269
Publication Date:
November 25, 2021
Filing Date:
May 18, 2021
Export Citation:
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Assignee:
HC SEMITEK (ZHEJIANG) CO., LTD. (CN)
International Classes:
H01L33/62; H01L33/00
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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