LIGHT-EMITTING DIODE FLIP CHIP AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2021/233273

A1

A light-emitting diode flip chip and a manufacturing method therefor. The light-emitting diode flip chip comprises a substrate (10), an N-type semiconductor layer (21), an active layer (22), a P-type semiconductor layer (23), a reflective electrode (41), a connection electrode (42), an insulating dielectric layer (50), a P-type bonding pad (61), and an N-type bonding pad (62); both the P-type bonding pad (61) and the N-type bonding pad (62) comprise a composite layer (71) having multiple periods and a welding layer (72) stacked on the composite layer (71); each period of the composite layer (71) comprises a Ti layer (711) and an Al layer (712) stacked on the Ti layer (711); the welding layer (72) is an AuSn alloy layer, and the content of Au component in the welding layer (72) is 64% to 68%. An N-type bonding pad (62) and a P-type bonding pad (61) are formed by adding a welding layer (72) on a plurality of composite layers (71) formed by Ti layers (711) and Al layers (712) stacked on the Ti layers (711), so that the N-type bonding pad (62) and the P-type bonding pad (61) can be used for welding without damaging a chip, avoiding electric leakage caused by a welding material passing through a welding region.

LAN YE (CN)
HUANG LEI (CN)
ZHANG WEI (CN)
WU ZHIHAO (CN)
LI PENG (CN)

PCT/CN2021/094269

November 25, 2021

May 18, 2021

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HC SEMITEK ZHEJIANG CO LTD (CN)

H01L33/00; H01L33/62

CN111769190A	2020-10-13
CN208014741U	2018-10-26
CN109346564A	2019-02-15
CN1600495A	2005-03-30
CN106129214A	2016-11-16
CN206065704U	2017-04-05
JP2014192272A	2014-10-06
KR20140086373A	2014-07-08
CN203242615U	2013-10-16

BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)

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