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Patent Searching and Data


Title:
LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2020/159068
Kind Code:
A1
Abstract:
A light-emitting diode according to an embodiment comprises: a first-conductive-type semiconductor layer; a mesa which is located on the first-conductive-type semiconductor layer and comprises an active layer and a second-conductive-type semiconductor layer; and a lower insulating layer which covers the mesa and at least a portion of the first-conductive-type semiconductor layer exposed around the mesa and which has a first opening for allowing electrical connection to the first-conductive-type semiconductor layer and a second opening for allowing electrical connection to the second-conductive-type semiconductor layer. The active layer generates light having the peak wavelength of 500 nm or less, the lower insulating layer comprises a distributed Bragg reflector, and the lower insulating layer has a high-reflection wavelength band continuously exhibiting a reflection ratio of 90% or more within the wavelength range of the visible region. Within the high-reflection wavelength band, reflection ratios in a first wavelength region including the peak wavelength of light generated in the active layer are greater than reflection ratios in a second region of wavelengths within the range of 554-700 nm, and the first wavelength region is located in a region of wavelengths shorter than 554 nm.

Inventors:
KIM JAE KWON (KR)
HEO MIN CHAN (KR)
KIM KYOUNG WAN (KR)
KIM JONG KYU (KR)
KIM HYUN A (KR)
LEE JOON SUP (KR)
Application Number:
PCT/KR2019/017219
Publication Date:
August 06, 2020
Filing Date:
December 06, 2019
Export Citation:
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Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/38; H01L27/15; H01L33/10; H01L33/36; H01L33/60; H01L33/62
Foreign References:
KR20180062347A2018-06-08
KR20110085961A2011-07-27
KR20160141035A2016-12-08
KR101364720B12014-02-19
US20160133615A12016-05-12
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
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