Title:
LIGHT-RECEIVING ELEMENT, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/241010
Kind Code:
A1
Abstract:
Provided is a light-receiving element having a structure in which a floating diffusion region is surrounded by transfer gate electrodes in a single photoelectric conversion region constituting a pixel, the structure making it possible to improve optical symmetry and to extract light efficiently. The light-receiving element comprises: a photoelectric conversion region constituting a pixel; a floating diffusion region of a first electrical conductivity type provided on one main surface side of the photoelectric conversion region; and a plurality of transfer gate electrodes which are provided on the one main surface side of the photoelectric conversion region and are spaced apart from each other with a gate insulating film therebetween, the plurality of transfer gate electrodes being provided symmetrically about the floating diffusion region in a planar pattern.
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Inventors:
KURIHARA SHINICHIRO (JP)
Application Number:
PCT/JP2021/014626
Publication Date:
December 02, 2021
Filing Date:
April 06, 2021
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L31/10; H01L27/146; H04N5/374
Domestic Patent References:
WO2020095689A1 | 2020-05-14 | |||
WO2013118646A1 | 2013-08-15 | |||
WO2018207340A1 | 2018-11-15 | |||
WO2016158439A1 | 2016-10-06 |
Foreign References:
US20190296060A1 | 2019-09-26 | |||
US20190296075A1 | 2019-09-26 | |||
JP2011049446A | 2011-03-10 | |||
US20180019272A1 | 2018-01-18 | |||
JP2014187270A | 2014-10-02 | |||
JP2013125861A | 2013-06-24 | |||
JP2012164971A | 2012-08-30 | |||
JP2014225536A | 2014-12-04 | |||
JP2020005131A | 2020-01-09 | |||
JP2011159758A | 2011-08-18 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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