LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM

Title:

LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM

Document Type and Number:

WIPO Patent Application WO2005040918

Kind Code:

A3

Abstract:

Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm.

Inventors:

HUANG WU-SONG (US)
ALLEN ROBERT D (US)
ANGELOPOULOS MARIE (US)
KWONG RANEE W (US)
SOORIYAKUMARAN RATNAM

Application Number:

PCT/US2004/035253

Publication Date:

December 15, 2005

Filing Date:

October 22, 2004

Export Citation:

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Assignee:

IBM (US)
HUANG WU-SONG (US)
ALLEN ROBERT D (US)
ANGELOPOULOS MARIE (US)
KWONG RANEE W (US)
SOORIYAKUMARAN RATNAM

International Classes:

G03C1/76; G03F7/004; G03F7/075; G03F; (IPC1-7): G03C1/76

Foreign References:

EP0745633A2	1996-12-04
US20010038967A1	2001-11-08
US6225403B1	2001-05-01
US20020090572A1	2002-07-11
JPH10324748A	1998-12-08
JPH11302382A	1999-11-02
US6309796B1	2001-10-30

Other References: