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Patent Searching and Data


Title:
MAGNETIC MEMORY AND MAGNETIC MEMORY RECORDING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/163618
Kind Code:
A1
Abstract:
[Problem] To provide a magnetic memory with which the occurrence of inversion errors can be suppressed and stable recording can be achieved. [Solution] A magnetic memory comprises: a spin orbit layer in which spin-polarized electrons are generated by a current; a magnetic memory element that is provided on the spin orbit layer and that has a laminated structure consisting of an insulating layer and a magnetic layer in which the magnetization direction changes according to the information to be recorded; and a voltage application layer that applies a voltage to the magnetic layer via the insulating layer. The voltage application layer applies the voltage to the magnetic layer at the same time that the current flows to the spin orbit layer so as to change the magnetic anisotropy or the magnetic braking constant of the magnetic layer.

Inventors:
OHMORI HIROYUKI (JP)
HOSOMI MASANORI (JP)
HIGO YUTAKA (JP)
UCHIDA HIROYUKI (JP)
HASE NAOKI (JP)
SATO YO (JP)
Application Number:
PCT/JP2018/001696
Publication Date:
September 13, 2018
Filing Date:
January 22, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Foreign References:
JP2014045196A2014-03-13
US20150200003A12015-07-16
JP6258452B12018-01-10
JP2017112359A2017-06-22
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
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