Title:
MAGNETIC TUNNEL JUNCTION, MANUFACTURING METHOD, SPIN DIODE, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2021/016837
Kind Code:
A8
Abstract:
Provided in the present application are a magnetic tunnel junction, a manufacturing method, a spin diode, and a memory. With respect to the problem of a low tunnel polarization current transmission rate and a large RA of a conventional single barrier-based magnetic tunnel junction MRAM, the multiple barrier layer-based magnetic tunnel junction provided in the present application, while ensuring a high TMR, increases the tunnel polarization current transmission rate, reduces the RA, thus reducing component power consumption, and, at the same time, increases the reliability of a spin transfer torque flip process. The multiple barrier layer-based magnetic tunnel junction provided in the present invention is provided with the characteristics of low power consumption and low write error rate.
Inventors:
ZHAO WEISHENG (CN)
ZHOU HANGYU (CN)
ZHOU JIAQI (CN)
CAO KAIHUA (CN)
LI ZHI (CN)
ZHANG YOUGUANG (CN)
ZHOU HANGYU (CN)
ZHOU JIAQI (CN)
CAO KAIHUA (CN)
LI ZHI (CN)
ZHANG YOUGUANG (CN)
Application Number:
PCT/CN2019/098281
Publication Date:
February 25, 2021
Filing Date:
July 30, 2019
Export Citation:
Assignee:
UNIV BEIHANG (CN)
International Classes:
H01L43/08
Attorney, Agent or Firm:
BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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