Title:
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATION METHOD FOR SAID MAGNETORESISTANCE EFFECT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/045655
Kind Code:
A1
Abstract:
Provided is a magnetoresistance effect element provided with a quadruple interface, the magnetoresistance effect element having a small resistance-area product RA, a large magnetoresistance ratio, and a large effective magnetic anisotropy energy density Kefft*. The magnetoresistance effect element is provided with a first reference layer (B1), a first junction layer (11), a first divided recording layer (2), a second junction layer (12), a second divided recording layer (3), and a third junction layer (13). The first divided recording layer (2) has a configuration with a high magnetoresistance ratio (MR ratio). The second divided recording layer (3) has a configuration with a high effective magnetic anisotropy energy density (Kefft).
Inventors:
NISHIOKA KOICHI (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
HONJO HIROAKI (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
HONJO HIROAKI (JP)
Application Number:
PCT/JP2019/034229
Publication Date:
March 05, 2020
Filing Date:
August 30, 2019
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L21/8239; H01F10/16; H01F10/32; H01L27/105; H01L43/08
Domestic Patent References:
| WO2017212895A1 | 2017-12-14 | |||
| WO2013080436A1 | 2013-06-06 |
Foreign References:
| JP2008010590A | 2008-01-17 | |||
| JP2007080952A | 2007-03-29 | |||
| JP2014187169A | 2014-10-02 | |||
| JP2012064625A | 2012-03-29 |
Attorney, Agent or Firm:
EICHI PATENT & TRADEMARK CORP. (JP)
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