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Title:
MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, REPRODUCING HEAD, AND MAGNETIC RECORDING AND REPRODUCING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/110360
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device, each of which has high sensitivity to a magnetic field due to the large MR ratio.　In a magnetoresistive element provided with a magnetoresistive film according to the present invention, the magnetoresistive film is provided with at least a pair of ferromagnetic layers and a non-magnetic layer positioned between the pair of ferromagnetic layers, each of the pair of ferromagnetic layers is a layer having a body-centered cubic (bcc) crystal structure and represented by the general formula: Co100-pFep (wherein the parameter p satisfies the requirement: 0 ≦ p ≦ 75, and the p values in the pair of ferromagnetic layers are the same as or different from each other), the non-magnetic layer is a layer having a body-centered cubic (bcc) crystal structure and made from Cu, and each of the ferromagnetic layers and the non-magnetic layer is a single crystal (001) layer or a layer in which a (001) crystal plane is preferentially aligned.

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Inventors:
FATHONI KRESNA BONDAN (JP)
SAKURABA YUYA (JP)
SASAKI TAISUKE (JP)
NAKATANI TOMOYA (JP)
MIURA YOSHIO (JP)
HONO KAZUHIRO (JP)
Application Number:
PCT/JP2019/025635
Publication Date:
June 04, 2020
Filing Date:
June 27, 2019
Export Citation:
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Assignee:
NAT INST MATERIALS SCIENCE (JP)
International Classes:
G11B5/39; H01F10/16; H01F10/30; H01L43/08; H01L43/10
Foreign References:
US20110007420A12011-01-13
JP2015049927A2015-03-16
JPH06325934A1994-11-25
JP2015212996A2015-11-26
Attorney, Agent or Firm:
ASAMURA PATENT OFFICE, P.C. (JP)
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