Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/205737
Kind Code:
A1
Abstract:
The present disclosure provides a manufacturing method for a semiconductor structure, and a semiconductor structure. The manufacturing method for a semiconductor structure comprises the following steps: providing a substrate; forming a bottom contact structure in the substrate; forming a storage unit on the bottom contact structure; and forming a shielding structure covering the storage unit, wherein the shielding structure comprises a plurality of dielectric layers and shielding layers which are arranged alternately.
Inventors:
WU YULEI (CN)
Application Number:
PCT/CN2021/112336
Publication Date:
October 06, 2022
Filing Date:
August 12, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/22; H01L43/08
Foreign References:
| CN104518080A | 2015-04-15 | |||
| CN111883433A | 2020-11-03 | |||
| CN110718473A | 2020-01-21 | |||
| CN111587493A | 2020-08-25 | |||
| CN103443860A | 2013-12-11 | |||
| US20180269383A1 | 2018-09-20 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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