Title:
MARKING PATTERN IN FORMING STAIRCASE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/258116
Kind Code:
A1
Abstract:
A semiconductor device includes a stack structure (202) having a plurality of insulating layers and a plurality of conductor layers arranged alternatively over a substrate (201) along a vertical direction. The semiconductor device also includes a marking pattern having a plurality of interleaved layers of different materials over the substrate (201) and neighboring the stack structure (202). The marking pattern includes a central marking structure (206-0) located in a marking area (208), the central marking structure (206-0) dividing the marking area (208) into a first marking sub-area farther from the stack structure (202) and a second marking sub-area closer to the stack structure (202), a first pattern density of the first marking sub-area being higher than or equal to a second pattern density of the second marking sub-area.
Inventors:
CHEN LIN (CN)
LIU YUNFEI (CN)
WANG MENG (CN)
LIU YUNFEI (CN)
WANG MENG (CN)
Application Number:
PCT/CN2019/093153
Publication Date:
December 30, 2020
Filing Date:
June 27, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/115
Foreign References:
US20170358594A1 | 2017-12-14 | |||
US20160163686A1 | 2016-06-09 | |||
US20170186767A1 | 2017-06-29 | |||
CN109860201A | 2019-06-07 | |||
CN109786239A | 2019-05-21 | |||
US20170358594A1 | 2017-12-14 | |||
US20160163686A1 | 2016-06-09 |
Other References:
See also references of EP 3909078A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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