Title:
MEMORY CIRCUIT AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/035700
Kind Code:
A1
Abstract:
A memory circuit and a memory, the memory circuit at least comprising: a plurality of memory blocks, wherein each memory block comprises a first memory sub-block (11), a second memory sub-block (12) and a third memory sub-block (13) arranged in sequence; the second memory sub-block (12) comprises a first storage unit (121) and a second storage unit (122); the first memory sub-block (11) and the first storage unit (121) are used to store high-bit bytes, and the second storage unit (122) and the third memory sub-block (13) are used to store low-bit bytes; and in the arrangement direction of the memory sub-blocks, block selection addresses of different storage units arranged in parallel are different.
More Like This:
Inventors:
CHI SUNGSOO (CN)
Application Number:
PCT/CN2022/097338
Publication Date:
March 16, 2023
Filing Date:
June 07, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C8/08; G11C7/12
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
Download PDF: