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Patent Searching and Data


Title:
MEMORY DEVICE AND PROGRAM OPERATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/233324
Kind Code:
A1
Abstract:
In certain aspects, a memory device includes a memory string including a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor, and a peripheral circuit coupled to the memory string. The peripheral circuit is configured to in response to an interrupt during a program operation on a select memory cell of the plurality of memory cells, turn on at least one of the DSG transistor or the SSG transistor. The peripheral circuit is also configured to suspend the program operation after turning on the at least one of the DSG transistor or the SSG transistor.

Inventors:
DU ZHICHAO (CN)
WANG YU (CN)
LI HAIBO (CN)
JIANG KE (CN)
TIAN YE (CN)
Application Number:
PCT/CN2021/094511
Publication Date:
November 25, 2021
Filing Date:
May 19, 2021
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/08; G11C16/04; G11C16/10; G11C16/34
Domestic Patent References:
WO2016069487A12016-05-06
Foreign References:
US20160012891A12016-01-14
US20170301403A12017-10-19
US20160172042A12016-06-16
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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