Title:
MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/212399
Kind Code:
A1
Abstract:
A programming method for a memory device includes simultaneously starting to program a first plane and a second plane; and bypassing the first plane and keeping programming the second plane when the first plane has been programmed successfully and the second plane has not been programmed successfully yet.
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Inventors:
LI HAIBO (CN)
ZHANG CHAO (CN)
ZHANG CHAO (CN)
Application Number:
PCT/CN2020/086332
Publication Date:
October 28, 2021
Filing Date:
April 23, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/34; G11C16/10
Domestic Patent References:
| WO2006065566A1 | 2006-06-22 |
Foreign References:
| US20130163335A1 | 2013-06-27 | |||
| CN101147133A | 2008-03-19 | |||
| US9230689B2 | 2016-01-05 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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