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Patent Searching and Data


Title:
MEMORY DEVICE, SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/142346
Kind Code:
A1
Abstract:
A memory device, a semiconductor structure and a forming method therefor, related to the technical field of semiconductors. The forming method comprises: providing a substrate (1) which comprises an array region (11) and a metal interconnection region located at the periphery of the array region (11); forming a metal interconnection structure (2) in the metal interconnection region, wherein the metal interconnection structure (2) comprises a plurality of stacked metal wiring layers and a plurality of connecting columns (22) connected between the metal wiring layers, each metal wiring layer comprises a plurality of metal strips distributed at intervals, metal strips of two adjacent metal wiring layers are distributed in a staggered manner, and two adjacent metal strips located on the same layer are respectively connected to the same metal strip under the same layer by means of the connecting columns (22). The forming method can improve the product yield and prolong the service life of the device.

Inventors:
HE JUANJUAN (CN)
HUANG HSIN-PIN (CN)
Application Number:
PCT/CN2021/110987
Publication Date:
July 07, 2022
Filing Date:
August 05, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
CN206758421U2017-12-15
CN109962039A2019-07-02
CN104701271A2015-06-10
US20080099884A12008-05-01
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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