Title:
MEMORY DEVICE, TESTING METHOD THEREFOR AND USAGE METHOD THEREFOR, AND MEMORY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2022/057333
Kind Code:
A1
Abstract:
A memory device, a testing method therefor and a usage method therefor, and a memory system, which belong to the technical field of semiconductors. The memory device comprises: multiple channels, wherein each channel comprises a memory cell array, the memory cell array comprises a normal cell array, the normal cell array comprises normal memory cells, and the normal memory cells are volatile memory cells; a test control circuit, configured to control, in response to a test instruction, test of the normal cell arrays in the multiple channels, and configured to determine that access addresses of normal memory cells which fail to be tested in the normal cell arrays of the multiple channels are failure addresses; and a non-volatile memory cell array, comprising multiple non-volatile memory cells, and configured to receive the failure addresses from the test control circuit and store same. The memory device can enable multiple channels to share the same non-volatile memory cell array.
Inventors:
NING SHU-LIANG (CN)
Application Number:
PCT/CN2021/099238
Publication Date:
March 24, 2022
Filing Date:
June 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C29/10
Foreign References:
| CN212675921U | 2021-03-09 | |||
| CN103295648A | 2013-09-11 | |||
| US20030107926A1 | 2003-06-12 | |||
| CN110021333A | 2019-07-16 | |||
| US20100131812A1 | 2010-05-27 | |||
| CN103733260A | 2014-04-16 | |||
| CN202010966642A | 2020-09-15 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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