Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/208076
Kind Code:
A1
Abstract:
A memory device includes a first substrate, a first memory array, a second substrate, and at least one first vertical transistor. The first memory array is disposed on the first substrate. The first memory array includes at least one first word line structure. The first memory array is disposed between the first substrate and the second substrate in a vertical direction. The first vertical transistor is electrically connected with the first word line structure. At least a part of the at least one first vertical transistor is disposed in the second substrate.
Inventors:
TANG QIANG (CN)
HOU CHUN YUAN (CN)
HOU CHUN YUAN (CN)
Application Number:
PCT/CN2020/085356
Publication Date:
October 21, 2021
Filing Date:
April 17, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C8/08; G11C16/08; H01L27/115
Foreign References:
| US9595535B1 | 2017-03-14 | |||
| US10141326B1 | 2018-11-27 | |||
| US20180358096A1 | 2018-12-13 | |||
| US20160240254A1 | 2016-08-18 | |||
| CN110998846A | 2020-04-10 | |||
| US20160148943A1 | 2016-05-26 |
Other References:
See also references of EP 3924967A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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