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Patent Searching and Data


Title:
MEMORY READING METHOD AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/083633
Kind Code:
A1
Abstract:
A memory reading method. A memory comprises a plurality of word lines and a plurality of multi-bit storage units, which are connected to the plurality of word lines, wherein the multi-bit storage units are used for reading storage values of the multi-bit storage units by means of a multistage preset read voltage. The reading method comprises: respectively defining at least one read offset amount of each stage of a multistage preset read voltage (S101); selecting, as a sampling voltage, at least one stage of preset read voltage in the multistage preset read voltage, reading multi-bit storage units on adjacent word lines of a multi-bit storage unit to be read, and according to a sampling read value of the sampling voltage, setting an offset mark that represents the magnitude of the read offset amount (S102); and respectively combining the multistage preset read voltage with the read offset amount of each stage of preset read voltage corresponding to the offset mark, and reading the multi-bit storage unit to be read (S103).

Inventors:
GUO XIAOJIANG (CN)
ZHANG CHAO (CN)
LI HAIBO (CN)
Application Number:
PCT/CN2021/124946
Publication Date:
April 28, 2022
Filing Date:
October 20, 2021
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/26; G11C16/08; G11C16/34
Foreign References:
CN112201297A2021-01-08
US20060221714A12006-10-05
US20190267104A12019-08-29
US20200005878A12020-01-02
CN108986865A2018-12-11
CN103814408A2014-05-21
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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