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Patent Searching and Data


Title:
MEMORY, AND WRITING METHOD AND READING METHOD FOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2021/057179
Kind Code:
A1
Abstract:
A memory, and a writing method and a reading method for the memory. The memory comprises a spin-orbit torque providing layer (10), two storage bits (20), two diodes (30), a first bit line (40), a second bit line (50), a word line (60), a source line (70) and a transistor (80), wherein one end of the spin-orbit torque providing layer (10) is connected to the first bit line (40), and the other end of the spin-orbit torque providing layer (10) is connected to the transistor (80); the transistor (80) is respectively connected to the word line (60) and the source line (70); the two storage bits (20) are arranged on a surface of the spin-orbit torque providing layer (10) spaced apart from each other, and one end of each of the storage bits (20) away from the spin-orbit torque providing layer (10) is connected, in one-to-one correspondence, to a first end of each of the diodes (30) in series; and the first ends, connected to the two storage bits (20), of the diodes (30) correspond to different positive and negative electrodes, and second ends of the diodes (30) are respectively connected to the second bit line (50). The independent read-write of storage units of a memory can be realized.

Inventors:
YIN BIAO (CN)
MENG HAO (CN)
CHI KEQUN (CN)
LI ZHOU (CN)
Application Number:
CN2020/100912
Publication Date:
April 01, 2021
Filing Date:
July 08, 2020
Export Citation:
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Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
G11C11/16
Foreign References:
CN107204201A2017-09-26
CN109643567A2019-04-16
CN108538328A2018-09-14
CN109768065A2019-05-17
US20170365777A12017-12-21
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (Tower A Indo Building,A48 Zhichun Road, Haidian District, Beijing 8, CN)
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