Title:
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2012/071988
Kind Code:
A1
Abstract:
A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The MOSFET includes a substrate, a well region formed in the substrate, a shallow channel layer, a channel, a gate oxide layer, a gate region, a source region, and a drain region. The shallow channel layer is formed on a portion of the well region and includes a first shallow channel region and a second shallow channel region. The channel is arranged between the first shallow channel region and the second shallow channel region and connects the first shallow channel region and the second shallow channel region. Further, the gate oxide layer is formed on a portion of the well region between the first shallow channel region and the second shallow channel region and includes a first gate oxide region and a second gate oxide region arranged on different sides of the channel. The gate region is formed on the channel and the gate oxide layer; the source region is formed in the first shallow channel region and vertically extends into the well region under the first shallow channel region; and the drain region is formed in the second shallow channel region and vertically extends into the well region under the second shallow channel region.
Inventors:
WANG LE (CN)
Application Number:
PCT/CN2011/082406
Publication Date:
June 07, 2012
Filing Date:
November 18, 2011
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
WANG LE (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
WANG LE (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/10; H01L29/423
Foreign References:
| US7683436B2 | 2010-03-23 | |||
| US20070029623A1 | 2007-02-08 |
Attorney, Agent or Firm:
ADVANCE CHINA I.P.LAW OFFICE (Dongshan PlazaNo. 69 Xianlie Central Roa, Guangzhou Guangdong 5, CN)
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Claims: