Title:
METALENS UNIT, SEMICONDUCTOR FAULT ANALYSIS DEVICE, AND SEMICONDUCTOR FAULT ANALYSIS METHOD
Document Type and Number:
WIPO Patent Application WO/2019/216112
Kind Code:
A1
Abstract:
The present invention relates to a metalens unit and the like comprising a metalens that is provided with a structure for enabling thinning thereof. This metalens unit is provided with a metalens and a holding section for the metalens. The metalens is provided with a base section and a first antenna part. The first antenna part is configured from a plurality of first antennas having a first refractivity and a first intermediate section that has a second refractivity and that is positioned between the first antennas. The first antenna part is configured so that a one-dimensional array composed of some of the end surfaces among the ends surfaces of the plurality of first antennas includes a pattern in which at least one of the sizes of the end surfaces, the shapes of the ends surface, and the arrangement pitch changes along a reference line.
Inventors:
UENOYAMA SOH (JP)
TAKIGUCHI YUU (JP)
TERADA HIROTOSHI (JP)
TAKIGUCHI YUU (JP)
TERADA HIROTOSHI (JP)
Application Number:
PCT/JP2019/015835
Publication Date:
November 14, 2019
Filing Date:
April 11, 2019
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
G02B1/02; G02B3/00; G02B21/02; G02B21/06
Domestic Patent References:
WO2005043210A1 | 2005-05-12 | |||
WO2013118351A1 | 2013-08-15 |
Foreign References:
JP2015092234A | 2015-05-14 | |||
US20140044392A1 | 2014-02-13 | |||
US20160353039A1 | 2016-12-01 | |||
US20140263982A1 | 2014-09-18 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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