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Title:
METHOD FOR CONTROLLING THE EXTENT OF NOTCH OR UNDERCUT IN AN ETCHED PROFILE USING OPTICAL REFLECTOMETRY
Document Type and Number:
WIPO Patent Application WO2004006306
Kind Code:
A3
Abstract:
A method and apparatus for controlling lateral etching during an etching process. The method and apparatus includes laterally etching a lower layer of a stack of layers in a processing chamber, where an endpoint detection system radiates a spectrum of light over the lower layer being etched and an area over the stack of layers proximate to the lower layer being etched. The intensity of light reflected from at least one of the stacked layers positioned lateral to the lower layer being etched is then measured. An endpoint detection system terminates the etching process upon measuring a predetermined metric associated with the intensity of reflected light from the at least one of the stacked layers.

Inventors:
JONES STEVEN J
DESHMUKH SHASHANK C
DAVIS MATTHEW F
LIAN LEI
YANG CHAN-SYUN
Application Number:
PCT/US2003/018476
Publication Date:
May 27, 2004
Filing Date:
June 12, 2003
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
International Classes:
H01L21/00; H01L21/28; H01L21/3213; (IPC1-7): H01L21/66; H01J37/32
Domestic Patent References:
WO2000034984A22000-06-15
Foreign References:
US5499733A1996-03-19
US20020048918A12002-04-25
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