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Title:
METHOD FOR DETECTING ETCHING DEFECTS OF ETCHING MACHINE
Document Type and Number:
WIPO Patent Application WO/2022/156204
Kind Code:
A1
Abstract:
A method for detecting etching defects of an etching machine, which belongs to the technical field of semiconductor production and fabrication. The method for detecting the etching defects of the etching machine comprises: providing a test wafer, wherein the test wafer comprises a substrate (100), a first dielectric layer (200) and a second dielectric layer (300), the first dielectric layer (200) and the second dielectric layer (300) are sequentially formed on the top surface of the substrate (100), and a capacitive contact structure (400) is provided in the substrate (100) (S100); transferring the test wafer into an etching machine to be detected, and etching part of the second dielectric layer (300) and part of the first dielectric layer (200) so as to form a capacitance hole (S200); removing the second dielectric layer (300) so as to form a measurement wafer (S300); transferring the measurement wafer to a defect detection machine, and detecting the shape of the capacitance hole of the measurement wafer (S400); and according to the shape of the capacitance hole of the measurement wafer, determining whether the etching machine has an etching defect (S500). The method for detecting etching defects of the etching machine is simple and convenient, and may accurately determine whether the etching machine has an etching defect, thus improving the detection efficiency of the etching machine.

Inventors:
SUN YULE (CN)
Application Number:
PCT/CN2021/113357
Publication Date:
July 28, 2022
Filing Date:
August 18, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11B11/24; H01L21/8242
Foreign References:
CN112902870A2021-06-04
CN101211805A2008-07-02
CN107689362A2018-02-13
CN108717936A2018-10-30
CN101990636A2011-03-23
US20090140397A12009-06-04
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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