Title:
METHOD FOR DIVIDING GAN SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/066467
Kind Code:
A1
Abstract:
Provided is a GaN substrate-dividing method capable of forming a scribe line required for division on a GaN substrate by scribing the GaN substrate using a scribing wheel having a groove portion on the outer periphery thereof, and dividing the GaN substrate along the scribe line without generating unnecessary cracks in the horizontal direction. The method for dividing a GaN substrate according to the present invention using a scribing wheel (1) having a groove portion (5) on the outer periphery thereof has: a scribing step for bringing the blade edge (2) of the scribing wheel (1) into vertical contact with the GaN substrate, and rotating and moving the scribing wheel (1) with a load applied thereto, to form a scribe line (L); and a breaking step for dividing the GaN substrate having the scribe line (L) thus formed.
Inventors:
ASAI YOSHIYUKI (JP)
KITAICHI MITSURU (JP)
KITAICHI MITSURU (JP)
Application Number:
PCT/JP2019/034318
Publication Date:
April 02, 2020
Filing Date:
August 26, 2019
Export Citation:
Assignee:
MITSUBOSHI DIAMOND IND CO LTD (JP)
International Classes:
B28D5/00; C30B29/38; C30B33/00; H01L21/301
Foreign References:
| JP2013062372A | 2013-04-04 | |||
| JP2015019054A | 2015-01-29 | |||
| JP2017024349A | 2017-02-02 | |||
| JP2012000792A | 2012-01-05 |
Attorney, Agent or Firm:
YASUDA, Mikio (JP)
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