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Patent Searching and Data


Title:
METHOD FOR DRIVING A HIGH SIDE P-CHANNEL MOSFET
Document Type and Number:
WIPO Patent Application WO2004075259
Kind Code:
B1
Abstract:
A P-CHANNEL MOSFET (25) is configured as a high side switch by arranging a capacitor (C1) between the P-CHANNEL MOSFET gate and a pair of push/pull transistors (21, 22) in a control circuit. A pull-up resistor (R1) is connected with the high side supply, one leg of the capacitor (C1) and with the gate of the P-CHANNEL MOSFET. In a two-phase electrical drive circuit, a pair of P-CHANNEL MOSFETS (25, 26) is connected with the high side supply and a pair of N-CHANNEL MOSFETS (36, 40) is connected with the low side supply.

Inventors:
COUTU DAVID (US)
Application Number:
PCT/US2004/003836
Publication Date:
July 28, 2005
Filing Date:
February 11, 2004
Export Citation:
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Assignee:
COUTU DAVID (US)
International Classes:
H03K17/687; (IPC1-7): H03K17/56
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