Title:
METHOD FOR DRIVING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/084785
Kind Code:
A1
Abstract:
The present invention read data in a memory cell having a ferroelectric capacitor without destroying the data. During a reading operation for a memory cell having the ferroelectric capacitor, a readout operation is performed so that the voltage of the ferroelectric capacitor on a counter electrode side is stepwisely increased so as not to destroy the polarization of the ferroelectric capacitor. A first reading operation of the data from the memory cell is performed by applying a first voltage, at which a ferroelectric layer is not subjected to reverse polarization, to a capacitor, a second reading operation of the data from the memory cell is performed by applying a second voltage at which the ferroelectric layer is not subjected to reverse polarization, to the capacitor, and the second voltage is made greater than the first voltage.
Inventors:
OKAMOTO YUKI (JP)
ONUKI TATSUYA (JP)
FURUTANI KAZUMA (JP)
ONUKI TATSUYA (JP)
FURUTANI KAZUMA (JP)
Application Number:
PCT/IB2021/059225
Publication Date:
April 28, 2022
Filing Date:
October 08, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C11/22
Foreign References:
| JPH0793968A | 1995-04-07 | |||
| JPH10125078A | 1998-05-15 |
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