Title:
METHOD OF FABRICATING NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2014/133267
Kind Code:
A1
Abstract:
Embodiments of the invention provide a method of fabricating a nitride substrate. The method includes preparing a growth substrate; forming a sacrificial layer on the growth substrate, the sacrificial layer including an indium (In)-containing nitride horizontal etching layer and an upper nitride sacrificial layer disposed on the nitride horizontal etching layer; partially etching the sacrificial layer, the partially etching the sacrificial layer including horizontal etching of the nitride horizontal etching layer; forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE); and separating the nitride epitaxial layer from the growth substrate, wherein the nitride epitaxial layer is separated from the growth substrate in the nitride horizontal etching layer.
Inventors:
PARK KI YON (KR)
KIM HWA MOK (KR)
HAN CHANG SUK (KR)
CHOI HYO SHIK (KR)
KO MI SO (KR)
KIM HWA MOK (KR)
HAN CHANG SUK (KR)
CHOI HYO SHIK (KR)
KO MI SO (KR)
Application Number:
PCT/KR2014/001024
Publication Date:
September 04, 2014
Filing Date:
February 06, 2014
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L21/20
Foreign References:
JP2001223165A | 2001-08-17 | |||
JP2007266472A | 2007-10-11 | |||
US20070072396A1 | 2007-03-29 | |||
JP2004039810A | 2004-02-05 | |||
US20050167002A1 | 2005-08-04 | |||
US20060160334A1 | 2006-07-20 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (21, Teheran-ro 8-gil,,Gangnam-gu, Seoul 135-933, KR)
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