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Patent Searching and Data


Title:
METHOD OF FABRICATING NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2014/133267
Kind Code:
A1
Abstract:
Embodiments of the invention provide a method of fabricating a nitride substrate. The method includes preparing a growth substrate; forming a sacrificial layer on the growth substrate, the sacrificial layer including an indium (In)-containing nitride horizontal etching layer and an upper nitride sacrificial layer disposed on the nitride horizontal etching layer; partially etching the sacrificial layer, the partially etching the sacrificial layer including horizontal etching of the nitride horizontal etching layer; forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE); and separating the nitride epitaxial layer from the growth substrate, wherein the nitride epitaxial layer is separated from the growth substrate in the nitride horizontal etching layer.

Inventors:
PARK KI YON (KR)
KIM HWA MOK (KR)
HAN CHANG SUK (KR)
CHOI HYO SHIK (KR)
KO MI SO (KR)
Application Number:
PCT/KR2014/001024
Publication Date:
September 04, 2014
Filing Date:
February 06, 2014
Export Citation:
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Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L21/20
Foreign References:
JP2001223165A2001-08-17
JP2007266472A2007-10-11
US20070072396A12007-03-29
JP2004039810A2004-02-05
US20050167002A12005-08-04
US20060160334A12006-07-20
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (21, Teheran-ro 8-gil,,Gangnam-gu, Seoul 135-933, KR)
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