Title:
METHOD FOR FABRICATING TUNNELING FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/148909
Kind Code:
A1
Abstract:
A method for fabricating a tunneling field effect transistor comprises: fabricating a main spindle (202) on a substrate (201); covering a first passivation protective layer (203) onto a sidewall surface of the main spindle (202); forming a doped region (204) of a first doping type in an area that is not covered by the first passivation protective layer (203) and the main spindle (202); covering a second passivation protective layer (205) onto the first passivation protective layer (203); forming a source region (206) of a second doping type in an area of the doped region (204) that is not covered by the second passivation protective layer (205), the second doping type being opposite to the first doping type; removing the main spindle (202), and forming a drain region (209) of the first doping type in an area previously occupied by the removed main spindle (202); and removing the first passivation protective layer (203) and the second passivation protective layer (205), and fabricating a metal gate (210) in an area previously occupied by the removed first passivation protective layer (203) and the second passivation protective layer (205). In this way, the limitation of a photolithographic process can be overcome to realize a small gate width, and a flexible design of a doping pocket can be realized, making it possible to be compatible with conventional semiconductor processes.
More Like This:
| JPH088348 | [Title of Invention] Charge Transfer Device |
| JPH05211342 | SWITCHING ELEMENT |
| JPS62229879 | CHARGE TRANSFER DEVICE |
Inventors:
TSAI HAOCHENG (CN)
ZHAO JING (CN)
ZHANG CHEN-XIONG (CN)
ZHAO JING (CN)
ZHANG CHEN-XIONG (CN)
Application Number:
PCT/CN2017/073816
Publication Date:
August 23, 2018
Filing Date:
February 16, 2017
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/772; H01L21/335
Domestic Patent References:
| WO2016095885A1 | 2016-06-23 |
Foreign References:
| CN102623495A | 2012-08-01 | |||
| US20110073909A1 | 2011-03-31 | |||
| US20100038713A1 | 2010-02-18 | |||
| CN104272444A | 2015-01-07 | |||
| CN104617137A | 2015-05-13 | |||
| CN102239562A | 2011-11-09 | |||
| US20120043607A1 | 2012-02-23 |
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
Download PDF: