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Title:
METHOD FOR FABRICATING AN ULTRA SHALLOW JUNCTION OF A FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO2004006303
Kind Code:
A3
Abstract:
A method of fabricating an ultra shallow junction of a field effect transistor is provided. The method includes the steps of etching a substrate near a gate structure to define a source region and a drain region of the transistor, forming a spacer/protective film having poor step coverage to protect frontal surfaces of the source and drain regions, laterally etching sidewalls of the regions beneath a gate dielectric to define a channel region, and removing the protective film.

Inventors:
LIU WEI
MUI DAVID S L
SCUDDER LANCE A
COMITA PAUL B
SAMOILOV ARKADII V
ADIBI BABAK
Application Number:
PCT/US2003/021370
Publication Date:
April 15, 2004
Filing Date:
July 01, 2003
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
International Classes:
H01L21/336; H01L29/417; (IPC1-7): H01L21/336; H01L29/417
Domestic Patent References:
WO2001071818A12001-09-27
Foreign References:
US6399973B12002-06-04
US6346729B12002-02-12
US5481126A1996-01-02
US6342421B12002-01-29
US5972762A1999-10-26
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