Title:
METHOD FOR FORMING CONTACT HOLE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/005279
Kind Code:
A1
Abstract:
A post is formed on a substrate. After applying an insulating film material over the substrate so as to form a film on the substrate such that the upper end of the post is exposed, the insulating film material is cured, thereby forming an insulating film on the substrate. A contact hole is formed in the insulating film by removing the post. The post has a curved portion or bent portion that protrudes in a direction that is opposite to the flowing direction of the insulating film material that is applied and formed into a film.
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Inventors:
HATA TAKUYA (JP)
Application Number:
PCT/JP2011/065188
Publication Date:
January 10, 2013
Filing Date:
July 01, 2011
Export Citation:
Assignee:
PIONEER CORP (JP)
HATA TAKUYA (JP)
HATA TAKUYA (JP)
International Classes:
H01L21/768; H01L21/28; H01L29/786; H01L51/05; H01L51/50; H05B33/02
Foreign References:
| JP2005072360A | 2005-03-17 | |||
| JP2003107492A | 2003-04-09 | |||
| JP2009152085A | 2009-07-09 | |||
| JP2005327795A | 2005-11-24 |
Attorney, Agent or Firm:
FUJIMURA PATENT BUREAU, P. C. (JP)
Patent business corporation Toson joint patent firm (JP)
Patent business corporation Toson joint patent firm (JP)
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Claims: