Title:
METHOD OF FORMING PATTERN
Document Type and Number:
WIPO Patent Application WO/2008/041468
Kind Code:
A1
Abstract:
A method of forming a pattern, comprising the steps of forming an underlayer film
on a support with the use of a material for underlayer film formation; forming
a hard mask on the underlayer film with the use of a silicon base material for hard
mask formation; coating the hard mask with a chemical amplification type negative
resist composition to thereby form a first resist film; subjecting the first
resist film to selective exposure via a first mask pattern and development to
thereby form a first resist pattern; with the use of the first resist pattern as
a mask, etching the hard mask to thereby form a first pattern; coating the first
pattern and underlayer film with a chemical amplification type positive silicon
resist composition to thereby form a second resist film; subjecting the second
resist film to selective exposure via a second mask pattern and development to
thereby form a second resist pattern; and with the use of the first pattern and
second resist pattern as a mask, etching the underlayer film to thereby form a
second pattern.
Inventors:
HARADA HISANOBU (JP)
KOHNO SHINICHI (JP)
IWASHITA JUN (JP)
KOHNO SHINICHI (JP)
IWASHITA JUN (JP)
Application Number:
PCT/JP2007/067880
Publication Date:
April 10, 2008
Filing Date:
September 13, 2007
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
HARADA HISANOBU (JP)
KOHNO SHINICHI (JP)
IWASHITA JUN (JP)
HARADA HISANOBU (JP)
KOHNO SHINICHI (JP)
IWASHITA JUN (JP)
International Classes:
G03F7/40; G03F7/039; G03F7/075; G03F7/26; H01L21/027
Foreign References:
| JPS63170917A | 1988-07-14 | |||
| JPH09205081A | 1997-08-05 | |||
| JP2005029742A | 2005-02-03 | |||
| JP2006084799A | 2006-03-30 | |||
| JP2005018054A | 2005-01-20 |
Other References:
TAKEAKI EBIHARA ET AL.: "Beyond k1=0.25 lithography: 70nm L/S patterning using KrF scanners", PROCEEDINGS OF SPIE, vol. 5256, 2003, pages 985 - 994, XP002418693
SUNGKOO LEE ET AL.: "Double exposure technology using silicon containing materials", PROCEEDINGS OF SPIE, vol. 6153, February 2006 (2006-02-01), pages 61531K1 - 61531K7, XP003021862
SUNGKOO LEE ET AL.: "Double exposure technology using silicon containing materials", PROCEEDINGS OF SPIE, vol. 6153, February 2006 (2006-02-01), pages 61531K1 - 61531K7, XP003021862
Attorney, Agent or Firm:
TANAI, Sumio et al. (Yaesu Chuo-k, Tokyo 53, JP)
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