Title:
METHOD FOR FORMING A SILICON FILM AND INK COMPOSITION FOR INK JET
Document Type and Number:
WIPO Patent Application WO/2000/059014
Kind Code:
A1
Abstract:
A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.
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Inventors:
SEKI SHUNICHI (JP)
SHIMODA TATSUYA (JP)
MIYASHITA SATORU (JP)
FURUSAWA MASAHIRO (JP)
YUDASAKA ICHIO (JP)
MATSUKI YASUO (JP)
TAKEUCHI YASUMASA (JP)
SHIMODA TATSUYA (JP)
MIYASHITA SATORU (JP)
FURUSAWA MASAHIRO (JP)
YUDASAKA ICHIO (JP)
MATSUKI YASUO (JP)
TAKEUCHI YASUMASA (JP)
Application Number:
PCT/JP2000/001987
Publication Date:
October 05, 2000
Filing Date:
March 29, 2000
Export Citation:
Assignee:
SEIKO EPSON CORP (JP)
JSR CORP (JP)
SEKI SHUNICHI (JP)
SHIMODA TATSUYA (JP)
MIYASHITA SATORU (JP)
FURUSAWA MASAHIRO (JP)
YUDASAKA ICHIO (JP)
MATSUKI YASUO (JP)
TAKEUCHI YASUMASA (JP)
JSR CORP (JP)
SEKI SHUNICHI (JP)
SHIMODA TATSUYA (JP)
MIYASHITA SATORU (JP)
FURUSAWA MASAHIRO (JP)
YUDASAKA ICHIO (JP)
MATSUKI YASUO (JP)
TAKEUCHI YASUMASA (JP)
International Classes:
C23C18/06; C23C18/08; C23C18/12; H01L21/208; H01L21/336; H01L31/18; H01L51/00; H01L51/40; (IPC1-7): H01L21/208; C01B33/02
Foreign References:
JPH10321536A | 1998-12-04 | |||
JPH03215941A | 1991-09-20 | |||
JPH088179A | 1996-01-12 | |||
JPH1179727A | 1999-03-23 | |||
JPH06191821A | 1994-07-12 | |||
JPH05144741A | 1993-06-11 |
Other References:
See also references of EP 1087428A4
Attorney, Agent or Firm:
Suzuki, Kisaburo (Owa 3-chome Suwa-shi, Nagano, JP)
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