Title:
METHOD FOR LIMITING DIVOT FORMATION IN POST SHALLOW TRENCH ISOLATION PROCESSES
Document Type and Number:
WIPO Patent Application WO2003044833
Kind Code:
A3
Abstract:
A method for limiting divot (305) formation in shallow trench isolation structures. The method includes: providing a trench (285) formed in a silicon region (260) with a deposited oxide (290); oxidizing a top layer of the silicon region (260) to form a layer of thermal oxide (302) on top of the silicon region (260); and selectively etching the thermal oxide (302) with respect to the deposited oxide (290).
Inventors:
BARTLAU PETER H
CANTELL MARC W
LASKEY JEROME B
WEIL JAMES D
CANTELL MARC W
LASKEY JEROME B
WEIL JAMES D
Application Number:
PCT/US2002/036397
Publication Date:
November 27, 2003
Filing Date:
November 14, 2002
Export Citation:
Assignee:
IBM (US)
International Classes:
H01L21/28; H01L21/302; H01L21/308; H01L21/316; H01L21/76; H01L21/762; H01L21/8238; H01L27/08; H01L27/092; H01L29/423; H01L29/49; H01L29/78; (IPC1-7): H01L21/76
Foreign References:
| US6051478A | 2000-04-18 | |||
| US6197659B1 | 2001-03-06 | |||
| US5447884A | 1995-09-05 | |||
| US6271094B1 | 2001-08-07 | |||
| US20020028555A1 | 2002-03-07 | |||
| US6335261B1 | 2002-01-01 | |||
| US6251746B1 | 2001-06-26 | |||
| US6248641B1 | 2001-06-19 | |||
| US6180493B1 | 2001-01-30 | |||
| US6165871A | 2000-12-26 | |||
| US6027982A | 2000-02-22 | |||
| US5998278A | 1999-12-07 |
Other References:
See also references of EP 1464074A4
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