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Patent Searching and Data


Title:
METHOD FOR MAKING A CRACK IN THE EDGE PORTION OF A DONOR SUBSTRATE, USING AN INCLINED LASER BEAM
Document Type and Number:
WIPO Patent Application WO/2016/207277
Kind Code:
A8
Abstract:
The invention relates to a method for cutting solids wafers (1) off a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), and producing at least one modification (10) in the interior of the donor substrate (2) by means of at least one laser beam (12), said laser beam (12) penetrating the donor substrate (2) via a flat surface (16) of the donor substrate (2). The laser beam (12) is inclined with respect to the flat surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate. The laser beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solids wafer (1) detaches itself from the donor substrate (2) as a result of the modifications (10) produced. Or a stress-inducing layer (14) is produced in or arranged on the flat surface (16) of the donor substrate (2) and mechanical stress is produced in the donor substrate (2) by exposing the stress-inducing layer (14) to heat. The mechanical stress produces a crack (20) for separating a solids layer (1), which crack propagates along the modifications (10).

Inventors:
SWOBODA MARKO (DE)
BEYER CHRISTIAN (DE)
SCHILLING FRANZ (DE)
RICHTER JAN (DE)
Application Number:
PCT/EP2016/064536
Publication Date:
November 30, 2017
Filing Date:
June 23, 2016
Export Citation:
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Assignee:
SILTECTRA GMBH (DE)
International Classes:
B23K26/00; B23K26/53; B28D1/00; B28D1/22; B28D5/00; C03B33/02; C03B33/09; C03B33/095; H01L21/268; H01L21/304; B23K101/40
Attorney, Agent or Firm:
ASCHERL, Andreas et al. (München, DE)
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